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Bipolar transistors TKD165-125-8

Bipolar transistors TKD165-125-8

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Ukraine, Rovno
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80% of positive reviews from 45
8 years on Allbiz
Technical characteristics
  • Country of manufactureRussia
  • Type of transistorBipolar

TKD165 - 125 - 8
transistor power silicon epitaxially mezaplanarny.
Designed for use in transducers, switching and amplifying devices, electric control systems.
The maximum permissible surge current collector - 125A
maximum collector - base voltage of - 800V

Symbol structure:
TKD165 - 125 - 8 - XXX:
TCD - silicon transistor;
1 - ref design revision number;
6 - size designation;
5 - designation of embodiment of the housing;
125 - the maximum pulse collector current, A;
8 - Class of overvoltage the collector - base, V;
X - band saturation voltage;
X - climatic modification;
X - placement category

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Bipolar transistors TKD165-125-8
Bipolar transistors TKD165-125-8
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