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KT841A transistor

KT841A transistor

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Ukraine, Rovno
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+380 
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8 years on Allbiz
Technical characteristics
  • Country of manufactureRussia
  • Type of transistorBipolar
Description
KT841A
Transistors silicon planar structures of n-p-n switching. 
Are intended for application in the switching devices, pulse modulators, powerful converters, linear voltage stabilizers. 
KT841B, KT841V, KT841G, KT841D, KT841E transistors are issued in the metal case with glass insulators and rigid conclusions. 
The type of the device is specified on the case.
The mass of transistors are no more than 20 g.
Case type: KT-9 (TO-3).
Specifications: aa0.336.654 TU.

Main technical characteristics of the KT841A transistor:
• Structure of the transistor: n-p-n;
• Rk max - the Constant disseminated collector power: 3 Of W;
• Rk max t - the Constant disseminated collector power with the heat sink: 50 W;
• fgr - the Boundary frequency of coefficient of transfer of current of the transistor for the scheme with the general emitter: not less than 10 MHz;
• Ukbo max - the Maximum tension of the collector base at the set return current of a collector and the opened emitter chain: 600 V;
• Uebo max - the Maximum tension the emitter base at the set return current of the emitter and the opened collector chain: 5 B;
• Ik max - the Most admissible direct current of a collector: 10 A;
• Ik and max - the Most admissible pulse current of a collector: 15 A;
• Ikbo - the Return current of a collector - current through collector transition at the set return tension of the collector base and the opened emitter conclusion: no more than 3 ma (600B);
• h21e - Static coefficient of transfer of current of the transistor for schemes with the general emitter: more than 12;
• Sk - the Capacity of collector transition: no more than 300 pf;
• Rke us - saturation Resistance between a collector and the emitter: no more than 0,3 Ohms;
• tpac - rassasyvaniye Time: no more than 1000 nanoseconds  

Technical characteristics of KT841A, KT841B, KT841V, KT841G, KT841D, KT841E transistors:

Type
transistor
Structure Extreme values of parameters at Tp of =25 °C Values of parameters at Tp of =25 °C TP
max
T
max
IK
max
IK. AND.
max
UKER max
(UKE0 max)
UKB0 max UEB0 max RK max
(RK. T. max)
h21e UKE
us.
IKBO IEBO IKER f gr. CK SE
And And In In In W   In ma ma ma MHz pf pf °C °C
KT841A n-p-n 10 15 350 600 5 3 (50) > 12 <1,5 <3 <10 - > 10 <300 <5000 150 - 45 … +100
KT841B n-p-n 10 15 250 800 5 3 (50) > 12 <1,5 <3 <10 - > 10 <300 <5000 150 - 45 … +100
KT841B n-p-n 10 15 350 600 5 3 (50) > 12 <1,5 <3 <10 - > 10 <300 <5000 150 - 45 … +100
KT841G n-p-n 10 15 150 200 5 3 (100) > 20 <2,2 <3 <10 - > 7 <300 <5000 150 - 45 … +100
KT841D n-p-n 10 15 400 500 5 3 (100) > 20 <2,2 <3 <10 - > 5 <300 <5000 150 - 45 … +100
KT841E n-p-n 10 15 400 800 5 3 (50) > 10 <1,5 <3 <10 - > 7 <300 <5000 150 - 45 … +100
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