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KT930B transistor (Transistor KT930B)

KT930B transistor (Transistor KT930B)

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Technical characteristics
  • BrandНПО Электроника, Воронеж
  • Country of manufactureRussia
Transistors KT930B silicon epitaxial planar structures npn generator.
Designed for the use in power amplifiers, frequency multipliers and oscillators at frequencies 100 ... 400 MHz with a supply voltage 28 V.
Available in a sintered body with a stripe conclusions.
Inside the case there is a matching LC-unit.
Device type is indicated on the housing.
transistor weight not more than 7 g
Body type: CT-32.
Specifications: aA0.336.253 TU.

The main technical characteristics of the transistor KT930B:
• The structure of transistor: npn;
• Pk t max - constant power dissipation collector with the heat sink: 120 W;
• fgr - transistor current gain cutoff frequency for the circuit with common emitter: more than 600 MHz;
• Uker samples - Breakdown collector-emitter voltage at a given current collector and a predetermined resistance in the base-emitter voltage: 50 V (0,1kOm);
• Uebo max - Maximum voltage emitter-base reverse current at a given emitter and collector open circuit 4;
• Ik max - The maximum permissible pulse collector current: 10 A;
• Iker - Reverse current collector-emitter reverse voltage at specified collector-emitter voltage and resistance in the base-emitter: no more than 100 mA (50V);
• h21e - Static transistor current gain for the common-emitter: 50;
• CK - collector junction capacity: not more than 170 pF;
• Ku.r. - Power amplification ratio: not less than 3.5 dB;
• Pout - transistor output power: not less than 75 W at 400 MHz;
• tc - time constant of the feedback circuit at a high frequency: no more than 11 ps  

Technical characteristics of transistors KT930A, KT930B:

A type
Structure Limit values of the parameters at T = 25 ° C Parameter values at T = 25 ° C TA
UKER max UKB0 max UEB0 max Upow max RK. SR. max h21E Uke
A A The The The The W   The mA mA GHz W dB FROM FROM
KT930A npn 6 - 50 - 4 28 75 > 40 - <20 <10 > 0.45 > 40 > 5 160 -40 ... + 85
KT930B npn 10 - 50 - 4 28 120 > 50 - <100 <20 > 0.6 > 75 > 3.5 160 -40 ... + 85

Symbols of the electrical parameters of transistors:
IK max - the maximum DC current of the transistor collector.
IK. I. max - the maximum pulse current of the transistor collector.
UKER max - the maximum DC voltage at the collector-emitter resistance in the base-emitter junction.
UKE0 max - the maximum continuous collector-emitter voltage at the base of current equal to zero.
UKB0 max - the maximum DC voltage at the collector-base current of the emitter is zero.
UEB0 max - the maximum DC voltage at the emitter-base collector current is zero.
Upow max - the maximum supply voltage.
RK.SR. max - the maximum allowable average power dissipated in the transistor collector.
RK. T. max - the maximum allowable continuous power dissipation in the transistor collector to the heat sink.
h21E - static current transfer ratio of the bipolar transistor.
Uke us. - Saturation voltage between the collector and emitter of the transistor.
IKER - reverse current collector-emitter voltage for a given reverse voltage collector-emitter voltage and resistance in a circuit baza- emitter.
IKBO - reverse current collector. The current through the collector junction reverse voltage for a given base-collector and open emitter output.
IEBO - reverse emitter current. The current through the emitter junction reverse voltage for a given emitter-base and open collector output.
f c - cutoff frequency of the current gain.
Pout - transistor output.
CSD - the gain on the power transistor.
TP max - the maximum allowable junction temperature.
T max - the maximum permissible ambient temperature.
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