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KT930B transistor (Transistor KT930B) – Elektro Mag | all.biz
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KT930B transistor (Transistor KT930B)

KT930B transistor (Transistor KT930B)

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Technical characteristics
  • BrandНПО Электроника, Воронеж
  • Country of manufactureRussia
Description
KT930B
Transistors KT930B silicon epitaxial planar structures npn generator.
Designed for the use in power amplifiers, frequency multipliers and oscillators at frequencies 100 ... 400 MHz with a supply voltage 28 V.
Available in a sintered body with a stripe conclusions.
Inside the case there is a matching LC-unit.
Device type is indicated on the housing.
transistor weight not more than 7 g
Body type: CT-32.
Specifications: aA0.336.253 TU.

The main technical characteristics of the transistor KT930B:
• The structure of transistor: npn;
• Pk t max - constant power dissipation collector with the heat sink: 120 W;
• fgr - transistor current gain cutoff frequency for the circuit with common emitter: more than 600 MHz;
• Uker samples - Breakdown collector-emitter voltage at a given current collector and a predetermined resistance in the base-emitter voltage: 50 V (0,1kOm);
• Uebo max - Maximum voltage emitter-base reverse current at a given emitter and collector open circuit 4;
• Ik max - The maximum permissible pulse collector current: 10 A;
• Iker - Reverse current collector-emitter reverse voltage at specified collector-emitter voltage and resistance in the base-emitter: no more than 100 mA (50V);
• h21e - Static transistor current gain for the common-emitter: 50;
• CK - collector junction capacity: not more than 170 pF;
• Ku.r. - Power amplification ratio: not less than 3.5 dB;
• Pout - transistor output power: not less than 75 W at 400 MHz;
• tc - time constant of the feedback circuit at a high frequency: no more than 11 ps  

Technical characteristics of transistors KT930A, KT930B:

A type
transistor
Structure Limit values of the parameters at T = 25 ° C Parameter values at T = 25 ° C TA
max
T
max
IK
max
IK. AND.
max
UKER max UKB0 max UEB0 max Upow max RK. SR. max h21E Uke
us.
IKER IEBO f RING. Pout CSD
A A The The The The W   The mA mA GHz W dB FROM FROM
KT930A npn 6 - 50 - 4 28 75 > 40 - <20 <10 > 0.45 > 40 > 5 160 -40 ... + 85
KT930B npn 10 - 50 - 4 28 120 > 50 - <100 <20 > 0.6 > 75 > 3.5 160 -40 ... + 85

Symbols of the electrical parameters of transistors:
IK max - the maximum DC current of the transistor collector.
IK. I. max - the maximum pulse current of the transistor collector.
UKER max - the maximum DC voltage at the collector-emitter resistance in the base-emitter junction.
UKE0 max - the maximum continuous collector-emitter voltage at the base of current equal to zero.
UKB0 max - the maximum DC voltage at the collector-base current of the emitter is zero.
UEB0 max - the maximum DC voltage at the emitter-base collector current is zero.
Upow max - the maximum supply voltage.
RK.SR. max - the maximum allowable average power dissipated in the transistor collector.
RK. T. max - the maximum allowable continuous power dissipation in the transistor collector to the heat sink.
h21E - static current transfer ratio of the bipolar transistor.
Uke us. - Saturation voltage between the collector and emitter of the transistor.
IKER - reverse current collector-emitter voltage for a given reverse voltage collector-emitter voltage and resistance in a circuit baza- emitter.
IKBO - reverse current collector. The current through the collector junction reverse voltage for a given base-collector and open emitter output.
IEBO - reverse emitter current. The current through the emitter junction reverse voltage for a given emitter-base and open collector output.
f c - cutoff frequency of the current gain.
Pout - transistor output.
CSD - the gain on the power transistor.
TP max - the maximum allowable junction temperature.
T max - the maximum permissible ambient temperature.
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