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Transistor 2T3117A

Transistor 2T3117A

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Ukraine, Rovno
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+380 
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8 years on Allbiz
Technical characteristics
  • Country of manufactureRussia
  • Housing materialCermet
Description
2T3117A Transistors 2T3117A silicon epitaxial planar pulse npn structure. 
Designed for use in switching and switching devices. 
Produced in metal packages with flexible leads. 
instrument type indicated on the package.
transistor Weight no more than 0,4 g
Body type: KT-1-7.
Specifications: aA0.339.256 TU.

The main technical characteristics of the transistor 2T3117A:
• The structure of transistor: npn
• Pk max - Constant collector dissipation power: 300 mW;
• fgr - transistor current gain cutoff frequency for the common-emitter circuit: not less than 200 MHz;
• Ukbo max - The maximum collector-base voltage at a predetermined reverse current collector and emitter circuit open: 60;
• Uebo max - maximum voltage of the emitter-base reverse current at a given emitter and open collector circuit 4;
• Ik max - The maximum permissible DC Collector Current: 400mA;
• Ikbo - Reverse current collector - the current through the collector junction reverse voltage for a given collector-base and emitter deriving open: not more than 5 pA (60B);
h21E - Static current transmission ratio for a common emitter circuit in large-signal mode: 40 ... 200;
• Cc - The capacity of the collector junction: no more than 10 pF;
• Rke us - saturation resistance between the collector and emitter: no more than 1.2 ohm  

Specifications 2T3117A transistors:

Type of
transistor
Structure Limit values for the parameters T = 25 ° C Parameter values at T = 25 ° C T P
max
T
max
I K
max
I KI
max
U CE R max
(U FE 0 max)
U CB 0 max U EB 0 max P K  max
(P KI  max)
h21E,
(H21e)
U CE
us.
I CCD f RING.
(F h21)
For W From To With e
mA mA AT AT AT mW   AT uA MHz dB pF pF WITH WITH
2T3117A npn 400 800 60 60 four 300 40 ... 200 0.5 five 200 - ten 80 150 -60 ... + 125

Symbols of the electrical parameters of transistors:
•  I of K  max  - the maximum continuous current of the transistor collector.
•  I of KI  max  - the maximum pulse current of the transistor collector.
•  U TBE R max  - maximum voltage between the collector and emitter at a given current collector and the resistance in the base-emitter circuit.
•  U TBE 0 max  - the maximum voltage between the collector and emitter of the transistor at a given current collector and base current, equal to zero.
•  U CB 0 max  - maximum collector-base voltage at a given current collector and an emitter current equal to zero.
•  U EB 0 max  - maximum constant emitter-base voltage at a collector current equal to zero. 
•  P K  max  - the maximum allowable continuous power dissipation in the transistor collector.
•  P KI  max  - the maximum permissible pulse power dissipation in the transistor collector.
•  h21E  - static current gain of the bipolar transistor.
•  h21 E  - current gain of the bipolar transistors in the small signal mode, in the common-emitter.
•  the U CE  us.  - the saturation voltage between the collector and emitter of the transistor.
•  I CCD  - reverse current collector. The current through the collector junction reverse voltage at a specified collector-base and emitter terminal open.
•  f c  - cutoff frequency current transfer coefficient.
•  fh 21  - limit frequency current gain of the bipolar transistor.
•  K W  - transistor noise ratio.
•  With K  - the capacity of the collector junction.
•  With E  - capacity of the collector junction.
•  T P  max  - maximum permissible junction temperature.
•  T max  - maximum allowable ambient temperature.
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