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Transistor 2T630B – Elektro Mag | all.biz
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Transistor 2T630B
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Transistor 2T630B

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Technical characteristics
  • Country of manufactureRussia
Description

2T630B


Transistors 2T630B silicon planar structures universal npn.
Designed for use in amplifiers and pulse devices in an AC gas discharge panel driving circuits of power stages key regulators and transducers.
Transistors 2T630A, 2T630B produced in metal packages with flexible leads.
Type of device indicated on the package.
Transistors 2T630A - 5, 5 - 2T630B produced in undivided form crystals on the wafer with bonding pads for hybrid integrated circuits.
Device type is indicated on the label.
Mass transistor in metal packages of not more than 2 g, a crystal of not more than 0,005 g
Body type: KT - 2 - 7.
Specifications: YUF3.365.043 TU.
The main technical characteristics of the transistor 2T630B:
• The structure of transistor: npn
• Pk max - Constant collector power dissipation: 0.8 Bm
• fgr - Boundary transistor current gain frequency for the common - emitter circuit: not less than 50 MGts -
• Ukbo max - The maximum collector - base voltage at a predetermined reverse current collector and open - emitter circuit 120 B -
• Uebo max - maximum voltage of the emitter - base reverse current at a given emitter and open collector circuit 7 B -
• Ik max - the maximum allowed collector current: 1000 mA -
• Ik and max - maximum allowable pulse current collector: 2000 mA -
• Ikbo - Reverse current collector - the current through the collector junction reverse voltage for a given collector - base and emitter deriving open: not more than 1 pA ( - 90V) -
• h21e - Static transistor current gain for common - emitter circuits 80 . . . 240 -
• Cc - The capacity of the collector junction: no more than 15 PF
• Rke us - saturation resistance between the collector and emitter: no more than 2 ohms

 

Technical characteristics of transistors 2T630A, 2T630B, 2T630A - 5, 5 - 2T630B:

A type
transistor
Structure Limit values for parameters when T = 25 ° C Parameter values at T = 25 ° C T P
max
T
max
I K
max
I KI
max
U CE R max U CB 0 max U EB 0 max P K max h21E U CE
us.
I CCD I DLE I KER f RING. From To With e
A A IN IN IN W   IN uA uA uA MHz pF pF ° C ° C
2T630A npn 1 2 120 120 7 0.8 40 . . . 120 & Lt - 0,3 & Lt - 1 & Lt - 100 - & Gt - 50 & Lt - 15 & Lt - 65 150 - 60 . . . + 125
2T630B npn 1 2 120 120 7 0.8 80 . . . 240 & Lt - 0,3 & Lt - 1 & Lt - 100 - & Gt - 50 & Lt - 15 & Lt - 65 150 - 60 . . . + 125
2T630A - 5 npn 1 2 120 120 7 0.8 40 . . . 120 & Lt - 0,3 & Lt - 100 & Lt - 100 - & Gt - 50 & Lt - 15 & Lt - 65 150 - 60 . . . + 125
2T630B - 5 npn 1 2 120 120 7 0.8 40 . . . 120 & Lt - 0,3 & Lt - 100 & Lt - 100 - & Gt - 50 & Lt - 15 & Lt - 65 150 - 60 . . . + 125

Symbols of the electrical parameters of transistors:
I of K max - the maximum continuous current of the transistor collector.
I of KI max - the maximum pulse current of the transistor collector.
U TBE R max - maximum voltage between the collector and emitter at a given current collector and the resistance in the base - emitter circuit.
U TBE 0 max - the maximum voltage between the collector and emitter of the transistor at a given current collector and base current, equal to zero.
U CB 0 max - maximum collector - base voltage at a given current collector and an emitter current equal to zero.
U EB 0 max - maximum constant emitter - base voltage at a collector current equal to zero.
P K max - the maximum allowable continuous power dissipation in the transistor collector.
P KT max - the maximum allowable continuous power dissipation in the transistor collector to the heat sink.
h21E - static current gain of the bipolar transistor.
the U CE us. - the saturation voltage between the collector and emitter of the transistor.
I CCD - reverse current collector. The current through the collector junction reverse voltage at a specified collector - base and emitter terminal open.
I EBE - reverse emitter current. The current through the emitter junction reverse voltage for a given emitter - base and open collector output.
I KER - reverse current collector - emitter reverse voltage at a given collector - emitter voltage and the resistance in the base - emitter circuit.
f c - cutoff frequency current transfer coefficient.
With K - the capacity of the collector junction.
With E - capacity of the collector junction.
T P max & nbsp - - maximum permissible junction temperature.
T max & nbsp - - maximum allowable ambient temperature.
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