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Transistor 2T808A
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Transistor 2T808A

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Ukraine, Rovno
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Technical characteristics
  • Country of manufactureRussia
Description

2T808A


Transistors silicon mezaplanarnye switching npn structure.
Designed for use in switching devices, generators horizontal scanning electronic voltage regulators.
Housing 2T808A transistors KT808A metal with glass insulators, and Snap.
Transistor 2T808A - 2 - a chip on a metallic molybdenum substrate with a protective coating and the wire ends.
Mass 2T808A transistors KT808A ( - without compression flange) - not more than 22 g,
Body type: KTYU - 3 - 20.
Specifications: Ge3.365.004 TU.
The main technical characteristics of the transistor 2T808A:
• The structure of transistor: npn
• Pk t max - constant power dissipation collector with the heat sink: 50Vt -
• fgr - Boundary transistor current gain frequency for the common - emitter circuit: not less than 7.2 mGts -
• Uker max - The maximum collector - emitter voltage at a given current collector and a predetermined resistance in the base - emitter circuits 120 (. - 250 cpm) - B -
• Uebo max - maximum voltage of the emitter - base reverse current at a given emitter and open collector circuit 4 B -
• Ik max - The maximum permissible DC Collector Current: 10 A
• Iker - Reverse current collector - emitter under given reverse voltage and the collector - emitter resistance in the base - emitter circuit 3 mA ( - 120V) -
• h21e - Static transistor current gain for common - emitter circuits 10 . . . 50
• Cc - collector junction capacity: up to 500 pF

 

Specifications 2T808A transistors KT808A:

A type
transistor
Structure Limit values for parameters when T = 25 ° C Parameter values at T = 25 ° C T P
max
T
max
I K
max
I KI
max
U CE R max
(U FE 0 max)
U CB 0 max U EB 0 max P K max
(P KT max)
h21E U CE
us.
I CCD I DLE f RING. For W From To With e
A A IN IN IN W   IN mA mA MHz dB pF pF ° C ° C
2T808A npn 10 fifteen 120 - 4 5 (50) 15 . . . 50 - 3 fifteen & Gt - 7,2 - 500 - 150 - 60 . . . + 125
KT808A npn 10 fifteen 120 - 4 5 (50) 15 . . . 50 - 3 fifteen & Gt - 7,2 - 500 - 150 - 60 . . . + 125

Symbols of the electrical parameters of transistors:
I of K max - the maximum continuous current of the transistor collector.
I of KI max - the maximum pulse current of the transistor collector.
U TBE R max - maximum voltage between the collector and emitter at a given current collector and the resistance in the base - emitter circuit.
U TBE 0 max - the maximum voltage between the collector and emitter of the transistor at a given current collector and base current, equal to zero.
U CB 0 max - maximum collector - base voltage at a given current collector and an emitter current equal to zero.
U EB 0 max - maximum constant emitter - base voltage at a collector current equal to zero.
P K max - the maximum allowable continuous power dissipation in the transistor collector.
P KT max - the maximum allowable continuous power dissipation in the transistor collector to the heat sink.
h21E - static current gain of the bipolar transistor.
the U CE us. - the saturation voltage between the collector and emitter of the transistor.
I CCD - reverse current collector. The current through the collector junction reverse voltage at a specified collector - base and emitter terminal open.
I EBE - reverse emitter current. The current through the emitter junction reverse voltage for a given emitter - base and open collector output.
f c - cutoff frequency current transfer coefficient.
K W - transistor noise ratio.
With K - the capacity of the collector junction.
With E - capacity of the collector junction.
T P max & nbsp - - maximum permissible junction temperature.
T max & nbsp - - maximum allowable ambient temperature.
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