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Transistor bipolar 2T118B

Transistor bipolar 2T118B

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Ukraine, Rovno
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Technical characteristics
  • BrandЭлектроника и связь
  • Country of manufactureRussia
Description
2Т118В Transistors 2T118B silicon epitaxial and planar two-emitter structures r-n-r switching. Are intended for application in modulators. Are issued in the metalglass case with flexible conclusions. The type of the device is specified on the side surface of the case. The mass of the transistor is no more than 0,5 g. Case type: KT-1. Specifications: TU ZhK3.365.209.

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