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Transistor bipolar 2T307B-1 – Elektro Mag | all.biz
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Transistor bipolar 2T307B-1

Transistor bipolar 2T307B-1

Custom order, 14 days
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Ukraine, Rovno
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Technical characteristics
  • BrandЭлектроника и связь
  • Country of manufactureRussia
Description
2T307B-1

Transistors 2T307B-1 silicon epitaxial and planar structures of n-p-n universal.

Are intended for application in amplifiers of high frequency and the switching devices.

Packageless, without kristalloderzhatel with flexible conclusions and a sheeting.

Are issued in an accompanying container.

The type of the device is specified in the label.

The mass of the transistor is no more than 0,002 g

Specifications: TU SB0.336.026.

Under the order, 14 days.

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