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Transistor bipolar 2T3129G-9 – Elektro Mag | all.biz
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Transistor bipolar 2T3129G-9

Transistor bipolar 2T3129G-9

Custom order, 14 days
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Ukraine, Rovno
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Technical characteristics
  • BrandЭлектроника и связь
  • Country of manufactureRussia
Description
2T3129G-9

Transistors 2T3129G-9 silicon epitaxial and planar structures of p-n-p universal.

Are intended for application in low-frequency amplifiers, generators, pulse devices of the pressurized equipment.

Are issued in the plastic case with rigid conclusions.

The type of the device is specified in the label.

The mass of the transistor is no more than 0,1 g.

Case type: KT-46a.

Specifications: aa0.339.568 TU.

Under the order, 14 days.

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