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Transistor bipolar 2T3132V-2

Transistor bipolar 2T3132V-2

Custom order, 14 days
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Ukraine, Rovno
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Technical characteristics
  • BrandЭлектроника и связь
  • Country of manufactureRussia
Description
2T3132V-2

Transistors 2T3132V-2 silicon epitaxial and planar structures of n-p-n intensifying with rated coefficient of noise.

Are intended for application in the microwave oven low-power the amplifier of range of frequencies 1... 7,2 GHz of the pressurized equipment.

Packageless on a kristalloderzhatel with flexible conclusions.

The transistor 2T3132A-5 is issued in the form of crystals without kristalloderzhatel and without conclusions.

The type of the device is specified in the label.

The mass of the transistor in the holder no more than 0,2 g, a crystal - no more than 0,002 g.

Case type: KT-21.

Specifications: aa0.339.300 TU

Under the order, 14 days.

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