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Transistor bipolar 2T317A-1

Transistor bipolar 2T317A-1

Custom order, 14 days
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Ukraine, Rovno
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8 years on Allbiz
Technical characteristics
  • BrandЭлектроника и связь
  • Country of manufactureRussia
Description
2T317A-1

Transistors 2T317A-1 silicon epitaxial and planar structures of n-p-n universal.

Are intended for application in the amplifiers of high and low frequency switching and pulse devices of the pressurized equipment.

Packageless with flexible conclusions and a sheeting.

Are located in the returnable container allowing to perform measurement of electric parameters without extraction of transistors from it.

The type of the device and marking point of a collector are given on a cover of a returnable container.

The mass of the transistor is no more than 0,01 g.

Specifications: TU GE3.365.002.

Under the order, 14 days.

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