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Transistor bipolar 2T324V-1

Transistor bipolar 2T324V-1

Custom order, 14 days
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Ukraine, Rovno
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Technical characteristics
  • BrandЭлектроника и связь
  • Country of manufactureRussia
Description
2T324V-1

Transistors 2T324V-1 silicon epitaxial and planar structures of n-p-n switching and intensifying with unrationed coefficient of noise.

Are intended for application in the switching devices 2T324A-1, 2T324B-1, 2T324V-1, 2T324G-1, KT324A-1, KT324B-1, KT324V-1, KT324G-1 and amplifiers of high frequency 2T324D-1, 2T324E-1, KT324D-1, KT324E-1.

Packageless without kristalloderzhatel with flexible conclusions and a sheeting.

Are issued in an accompanying container.

The type of the device is specified in the label.

The mass of the transistor is no more than 0,002 g.

Specifications: TU SB0.336.021.

Under the order, 14 days.

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