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Transistor bipolar 2T381B-1

Transistor bipolar 2T381B-1

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Ukraine, Rovno
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Technical characteristics
  • BrandЭлектроника и связь
  • Country of manufactureRussia
Description
2T381B-1

The pair transistors 2T381A-1, 2T381B-1, 2T381V-1, 2T381D-1 consisting of two silicon epitaxial and planar structures of n-p-n of transistors with separate conclusions.

The transistor 2T381G-1 is single.

Packageless without kristalloderzhatel with flexible conclusions and a sheeting.

Are delivered in the accompanying container allowing to perform measurement of electric parameters without extraction of transistors from it.

The type of the device is specified in the label.

The mass of each transistor is no more than 0,01 g.

Specifications: TU XA3.365.018.

Under the order, 14 days.

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