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Transistor KT608B – Elektro Mag | all.biz
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Transistor KT608B
tranzistor-kt608b

Transistor KT608B

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Ukraine, Rovno
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Technical characteristics
  • Country of manufactureRussia
Description

KT608B


Transistors KT608B silicon epitaxial planar structures npn switching.
Designed for use in high - speed and high - frequency impulse devices.
Produced in metal packages with flexible leads.
Type of device indicated on the side of the unit.
transistor weight no more than 2 years
Body type: KTYU - 3 - 6.
Specifications: SCHB3.365.054 TU.
The main technical characteristics of the transistor KT608B:
• The structure of transistor: npn
• Pk max - Constant collector dissipation power: 0.5 Bm
• fgr - Boundary transistor current gain frequency for the common - emitter circuit: not less than 200 MGts -
• Ukbo max - The maximum collector - base voltage at a predetermined reverse current collector and emitter open circuit 60 B -
• Uebo max - maximum voltage of the emitter - base reverse current at a given emitter and open collector circuit 4 B -
• Ik max - The maximum permissible DC Collector Current: 400 mA -
• Ik and max - maximum allowable pulse current collector: 800 mA -
• Ikbo - Reverse current collector - the current through the collector junction reverse voltage for a given collector - base and the open emitter output: less than 10 microamps ( - 60V) -
• h21e - Static transistor current gain for the circuits with a common emitter: 40 . . . 160
• Cc - The capacity of the collector junction: no more than 15 PF
• Rke us - saturation resistance between the collector and emitter: no more than 2.5 ohm

 

Specifications KT608A transistors KT608B:

A type
transistor
Structure Limit values for parameters when T = 25 ° C Parameter values at T = 25 ° C T P
max
T
max
I K
max
I KI
max
U CE R max U CB 0 max U EB 0 max P K max h21E U CE
us.
I CCD I DLE I KER f RING. From To With e
mA mA IN IN IN W   IN uA uA uA MHz pF pF ° C ° C
KT608A npn 400 800 60 60 4 0.5 20 . . . 80 & Lt - 1 & Lt - 10 & Lt - 10 - & Gt - 200 & Lt - 15 & Lt - 50 120 - 40 . . . + 85
KT608B npn 400 800 60 60 4 0.5 40 . . . 160 & Lt - 1 & Lt - 10 & Lt - 10 - & Gt - 200 & Lt - 15 & Lt - 50 120 - 40 . . . + 85

Symbols of the electrical parameters of transistors:
I of K max - the maximum continuous current of the transistor collector.
I of KI max - the maximum pulse current of the transistor collector.
U TBE R max - maximum voltage between the collector and emitter at a given current collector and the resistance in the base - emitter circuit.
U TBE 0 max - the maximum voltage between the collector and emitter of the transistor at a given current collector and base current, equal to zero.
U CB 0 max - maximum collector - base voltage at a given current collector and an emitter current equal to zero.
U EB 0 max - maximum constant emitter - base voltage at a collector current equal to zero.
P K max - the maximum allowable continuous power dissipation in the transistor collector.
P KT max - the maximum allowable continuous power dissipation in the transistor collector to the heat sink.
h21E - static current gain of the bipolar transistor.
the U CE us. - the saturation voltage between the collector and emitter of the transistor.
I CCD - reverse current collector. The current through the collector junction reverse voltage at a specified collector - base and emitter terminal open.
I EBE - reverse emitter current. The current through the emitter junction reverse voltage for a given emitter - base and open collector output.
I KER - reverse current collector - emitter reverse voltage at a given collector - emitter voltage and the resistance in the base - emitter circuit.
f c - cutoff frequency current transfer coefficient.
With K - the capacity of the collector junction.
With E - capacity of the collector junction.
T P max & nbsp - - maximum permissible junction temperature.
T max & nbsp - - maximum allowable ambient temperature.
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